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Free Sample
WhatsApp: +86 15361554542
mailto:info@shysemi.com
  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology
  • About Us
  • Contact Us
  • Blog
  • …  
    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology
    • About Us
    • Contact Us
    • Blog
Free Sample
  • The IPM (intelligent power module) of HXSEMI contains a drive circuit, which sets the optimal driving conditions for the power devices. The distance between the drive circuit and the gate of the power device is very short, and the output impedance is very low. Therefore, it is less susceptible to interference and does not require an additional reverse bias.

    Mechanical Arm

    • Integrating PFC and inverter functions
    • Self-developed 7-channel IC
    • integrating Bootstrap self-boost circuit
    • Interlock protection circuit
    • Fault signal function
    • Built-in NTC
    Recommend Products: IPM
  • Replacement list of Models with Industry's Top Enterprises

    Today, almost every scenario that requires human labor needs to use Mechanical Arm, and HXSEMI's mature IPM products are highly reliable and of excellent quality.

  • Block Diagram

    The HXSEMI compact intelligent power module integrates the drive circuit and protection circuit into one unit, enabling precise motor control while significantly reducing size and heat loss.

    Benefits

    HXSEMI's IPM can simplify the peripheral circuits, shorten the design cycle and reduce the number of assembly workers.

    • Integrated 6 fast recovery power MOSFETs (500 V / 5 A)
    • Integrated high voltage gate drive circuit
    • Compatible with 3.3 V & 5 V input signal, effective at high level
    • Integrated temperature output
    • Built-in quick recovery bootstrap diode
    • Insulation class 1500 V rms / min
    • Integrated bootstrap functionality
    • High reliability and thermal stability, good parameter consistency
  • Recommend Products: IPM

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