Technical Advantages Of IPM Products
The IPM products of HXSEMI have the following four advantages: advanced technology IGBT, integrated multiple functions Drive IC, high insulation IMS substrate, and high-quality packaging materials.
SYIM756-SFT: HXSEMI's Flagship IPM Solution
- Proprietary 7-channel HVIC with enhanced noise immunity.
- Independent Trench FS IGBT for inverter/PFC PWM applications.
- IMS substrate withstands >6000V insulation voltage.
- Japanese low-CTE package: 1.7W/m·K thermal conductivity, Tg ≥180°C.
Four IPM Technologies
The IPM products of HXSEMI have the following four advantages: advanced technology IGBT, integrated multiple functions Drive IC, high insulation IMS substrate, and high-quality packaging materials.
IGBT
- Design of grooved strip grating
- Field board and lateral variable doping terminal
- Field cutoff technology
- Design switch speed matching for inverter and PFC PWM frequencies separately
Drive IC
- Integrated bootstrap circuit
- Integrated PFC driver circuit
- Integrated PFC protection circuit
- Detection port anti-interference design
- Good match with independently developed IGBT
IMS Substrate
- High thermal resistance, high TC passivation layer material
- Anodic oxidation process
- Low EMl busbar design
- Design of anti-interferencegrounding wire
- Anti layering technology
EMC
- Various shapes and particle sizes of Al2O3 filling
- High TG plastic sealing material
- Matching of Linear Thermal
- Expansion Coefficient with Substrateand Chip Materials
- Techniques for increasing fluidityand reducing viscosity
Technical Advantages Of Chips
HXSEMI's IGBT chips are independently designed using the 6th generation Trench Field process. They have developed 1200V (75A-300A) chips and corresponding FRD series products, as well as 1700V (150A/200A) series products. The performance of these products ranks at the forefront of the industry, and the 1700V series has reached the leading level in China.
HXSEMI’s Core Strengths Of Chips
- Tape-out conducted at the world’s third-largest wafer fab (Huahong Group).
- Chips utilize HXSEMI's proprietary 6th-generation Trench Field technology.
- Enables operating voltage increase from 1200V to 1700V within the same die size.
- Vcesat coefficient is notably lower than domestic counterparts.
- Wafer-level CP test data provided.
- Supports customer-customized chip development.
