• When direct current passes through the SiC module, the outflow direction and frequency of the current are changed by the rapid opening and closing of different switch combinations, so as to output the desired alternating current.

    The SiC material used by HXSEMI has a large bandgap and a high electron saturation drift velocity, which allows SiC HPD modules to achieve higher power output in a smaller volume, thus reducing the size and weight of the device.

    Motor Drives

    • Inverter efficiency improved by 5% to 8%.
    • 3-in-1 car charger: OBC+DCDC+PDU.
    • All-in-1 motor controller
    • Switching frequency can reach 200-300kHz

  • Replacement list of Models with Industry's Top Enterprises

    HXSEMI's IGBTs can deliver a 5% to 8% improvement in inverter efficiency, significantly enhancing the driving range of electric vehicles.

  • Block Diagram

    The SiC material used by HXSEMI has high thermal conductivity and low energy loss, making the SiC HPD module more efficient in converting electrical energy and effectively reducing energy waste.

    Benefits

    HXSEMI’s modular inverter platform supports both IGBT-based and SiC-based traction inverter systems, enabling OEMs to speed up their transition to wide-bandgap technology.

    • Powerful charging infrastructure
    • Reliable & long-lifetime chargers
    • Increased power density
    • PSOC™ Control: optimized algorithm exec.
    • Lower conduction & switching losses

  • Recommend Products: SiC MOS, SiC Module

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