• IPM-DIP-26 Package

  • What are the differences of HXSEMI's DIP-26 product?

    This 600V IPM is an integrated industrial power semiconductor module designed for motor drive and inverter applications.

    The DIP-26 can be regarded as a reinforced, power-grade dual in-line package. Its key advantage lies in its wider pin pitch compared with standard DIP or SOP packages. The increased pin spacing directly provides greater creepage and clearance distances, which effectively prevent arcing or short-circuiting between adjacent pins under high-humidity or contaminated conditions.

    SYIM656-DG

    • Package：DIP-26
    • Voltage(V): 600
    • Current(A): 15
    • Strength:3Φ
    • Details: Up to 15kHz

    SYIM656-DGT

    • Package：DIP-26
    • Voltage(V): 600
    • Current(A): 15
    • Strength:3Φ
    • Details: Up to 15kHz, with NTC

    SYIM676-DG

    • Package：DIP-26
    • Voltage(V): 600
    • Current(A): 20
    • Strength:3Φ
    • Details: Up to 15kHz

    SYIM676-DGT

    • Package：DIP-26
    • Voltage(V): 600
    • Current(A): 20
    • Strength:3Φ
    • Details: Up to 15kHz, with NTC

  • Applications:

    The principal strengths of the DIP-26 package lie in its ability to support multi-channel operation and high-grade electrical isolation while delivering exceptional reliability, user-friendliness, and serviceability.This encapsulation format remains a classic yet enduring solution. Despite the prevailing trend in modern electronics toward miniaturization and surface-mount technology, the DIP-26 retains a vital role in sectors demanding high performance and robustness—notably in industrial, energy, and medical applications. It embodies a distinct design philosophy: where safety, stability, and operational accessibility take precedence over spatial efficiency, through-hole packaging continues to be one of the most dependable options for engineers.

    • Washing Machine Motor drive
    • Low power industrial motor drives

  • Features:

    • Fully insulated Double in line power module,integrated with 3Φ full bridge
    • Using lMS insulated and heat-dissipating substrate
    • DlP(Double in line)fully insulated packagestructure is adopted
    • Active high, compatible with TTL / CMOS level
    • Integrated bootstrap functionality
    • Independent inverter over-current shutdown
    • Under-voltage lockout at all channels
    • Cross-conduction prevention
    • Fault signal output
    • Independent low side lGBT emitter
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