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    <title>Design and manufacture semiconductor products - HXSEMI</title>
    <description>HUIXIN Semiconductor provides the industry's widest selection of IPM packages, delivering quality superior to Japanese and German alternatives.</description>
    <link>http://en.hxipmsemi.com/</link>
    <atom:link href="http://en.hxipmsemi.com/blog/feed.xml" rel="self" type="application/rss+xml"/>
    <item>
      <title>How to Better Characterize SiC MOS Dynamic Performance Using Double Pulse Testing</title>
      <pubDate>Thu, 16 Apr 2026 01:10:13 -0700</pubDate>
      <link>http://en.hxipmsemi.com/blog/how-to-better-characterize-sic-mos-dynamic-performance-using-dpt</link>
      <guid>http://en.hxipmsemi.com/blog/how-to-better-characterize-sic-mos-dynamic-performance-using-dpt</guid>
      <description>&lt;p&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Introduction&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;p class=" p s-blog-post-section-text-bs483 s-component-content s-blog-section-inner s-component s-text s-font-body sixteen columns container s-block-item s-repeatable-item s-block-sortable-item s-blog-post-section blog-section s-narrow-margin s-blog-post-section-bs483 s-blog-post-section-1" style="text-align: left; font-size: inherit;"&gt;&lt;span style="color: #444444;"&gt;With the rapid evolution of &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/sic-mos" data-type="" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;silicon carbide (SiC) MOSFET&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt; technology, its high-frequency switching advantages over traditional Si IGBTs have attracted increasing attention from engineers.This advantage primarily stems from the high electron saturation drift velocity of SiC MOS devices, enabling rapid transitions between on and off states, significantly reducing switching time.&lt;/span&gt;&lt;/p&gt;&lt;p&gt;&lt;span style="color: #444444;"&gt;At the same time, as a unipolar device, SiC MOSFETs exhibit no minority carrier storage during freewheeling, unlike bipolar Si IGBTs. This results in dramatically &lt;/span&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;lower reverse recovery losses&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt;. In fact, the reverse recovery charge (Qrr) of SiC MOS is typically only about one-tenth that of comparable silicon devices.&lt;/span&gt;&lt;/p&gt;&lt;p style="text-align: center;"&gt;&lt;em&gt;One corner of the HXSEMI laboratory&lt;/em&gt;&lt;/p&gt;&lt;p&gt;&lt;span style="color: #444444;"&gt;In many applications, such as: &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/motor-drive" data-type="" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;motor drives&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt;, &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/ev-charging-station" data-type=""...&lt;a href=http://en.hxipmsemi.com/blog/how-to-better-characterize-sic-mos-dynamic-performance-using-dpt&gt;Read More&lt;/a&gt;</description>
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      <title>IGBT Solutions for Photovoltaic (PV) Inverters</title>
      <pubDate>Thu, 09 Apr 2026 01:41:19 -0700</pubDate>
      <link>http://en.hxipmsemi.com/blog/igbt-solutions-for-photovoltaic-inverters</link>
      <guid>http://en.hxipmsemi.com/blog/igbt-solutions-for-photovoltaic-inverters</guid>
      <description>&lt;p style="font-size: inherit;"&gt;Driven by &lt;span style="color: #1966e1;"&gt;&lt;strong&gt;carbon neutrality goals and the global energy transition&lt;/strong&gt;&lt;/span&gt;, &lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/solar-inverters" data-type="undefined" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;solar power&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt; has become a key pillar of &lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/renewable-energy-overview" data-type="undefined" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;clean energy generation&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;. At the heart of every PV system, the inverter converts DC power from solar panels into grid-compliant AC.&lt;br&gt;It also enables system monitoring, protection, and communication functions.Within the inverter, the &lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/igbt-discretes" data-type="undefined" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;Insulated Gate Bipolar Transistor (IGBT)&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt; is the core device for power conversion.&lt;br&gt;It must deliver high efficiency while withstanding current surges and thermal stress under demanding operating conditions. This places strict requirements on device performance and long-term reliability.&lt;/p&gt;&lt;p style="font-size: 28px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;01. The Role of IGBTs in PV Inverters&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;h2 style="font-size: 24px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;1.1 High-Efficiency Power Switching&lt;/strong&gt;&lt;/span&gt;&lt;/h2&gt;&lt;h3 class=" p" style="font-size: inherit;"&gt;IGBTs act as the main switching devices in PV inverters. They are driven by high-speed PWM signals generated by DSP or CPU controllers. The gate driver circuit amplifies signals and provides electrical isolation for noise immunity.&lt;/h3&gt;&lt;p style="font-size: 24px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;1.2 Overcurrent and Short-Circuit Protection&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;h3 class=" p" style="font-size: inherit;"&gt;Load transients or faults can cause...&lt;a href=http://en.hxipmsemi.com/blog/igbt-solutions-for-photovoltaic-inverters&gt;Read More&lt;/a&gt;</description>
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      <title>Working Principles and Applications of IGBT in Medium-Frequency Power Supplies</title>
      <pubDate>Wed, 08 Apr 2026 02:47:58 -0700</pubDate>
      <link>http://en.hxipmsemi.com/blog/working-principles-and-applications-of-igbt-in-medium-frequency-power-supplies</link>
      <guid>http://en.hxipmsemi.com/blog/working-principles-and-applications-of-igbt-in-medium-frequency-power-supplies</guid>
      <description>&lt;p&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Medium-frequency power supplies&lt;/strong&gt;&lt;/span&gt; are widely used across industrial manufacturing, medical equipment, and scientific research. At the heart of these systems lies the &lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/igbt-discretes" data-type="undefined" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;IGBT (Insulated Gate Bipolar Transistor)&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;, a critical power semiconductor device that plays a decisive role in system performance and reliability.&lt;/p&gt;&lt;p&gt;In this article, &lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/technology" data-type="undefined" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;HXIPMSEMI&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt; provides an in-depth analysis of the working principles of IGBTs in medium-frequency power supplies, their key functions, as well as common failure modes and practical solutions.&lt;/p&gt;&lt;p style="font-size: 28px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;1. Working Principle of IGBT in Medium-Frequency Power Supplies&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;p&gt;In medium-frequency power systems, IGBTs primarily operate in &lt;span style="color: #1966e1;"&gt;&lt;strong&gt;switching mode&lt;/strong&gt;&lt;/span&gt;.&lt;/p&gt;&lt;p&gt;When a positive voltage is applied to the gate, a conductive channel forms inside the IGBT, allowing electrons to flow from the emitter to the collector. At this point, the IGBT is in the &lt;span style="color: #1966e1;"&gt;&lt;strong&gt;on-state&lt;/strong&gt;&lt;/span&gt;, enabling current to pass efficiently—much like opening a clear pathway for energy transmission.&lt;/p&gt;&lt;p&gt;Conversely, when the gate voltage is removed or reversed, the conductive channel disappears, and the IGBT enters the &lt;span style="color: #1966e1;"&gt;&lt;strong&gt;off-state&lt;/strong&gt;&lt;/span&gt;, blocking current flow entirely—effectively cutting off the energy path.&lt;/p&gt;&lt;p&gt;By precisely controlling the gate voltage, engineers can accurately switch the IGBT on and off, thereby regulating the output voltage and current of the...&lt;a href=http://en.hxipmsemi.com/blog/working-principles-and-applications-of-igbt-in-medium-frequency-power-supplies&gt;Read More&lt;/a&gt;</description>
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      <title>Insulation Characteristics and Differences of IGBT Chip Substrates</title>
      <pubDate>Wed, 01 Apr 2026 02:29:46 -0700</pubDate>
      <link>http://en.hxipmsemi.com/blog/insulation-characteristics-and-differences-of-igbt-chip-substrates2</link>
      <guid>http://en.hxipmsemi.com/blog/insulation-characteristics-and-differences-of-igbt-chip-substrates2</guid>
      <description>&lt;p style="font-size: 28px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;I. Fundamentals of Insulation Materials in Semiconductor Modules&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;p class=" s-blog-post-section-text-6jg6v s-component-content s-blog-section-inner s-component s-text s-font-body sixteen columns container s-block-item s-repeatable-item s-block-sortable-item s-blog-post-section blog-section s-narrow-margin s-blog-post-section-6jg6v s-blog-post-section-1" style="text-align: left; font-size: 18px;"&gt;&lt;span style="color: #444444;"&gt;In high-power semiconductor devices such as &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://www.hxipmsemi.com/igbt-discretes" data-type="" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;IGBTs&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt; and &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://www.hxipmsemi.com/ipm-overview" data-type="" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;IPMs (Intelligent Power Modules)&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt;, the materials used to electrically isolate live circuits from the module baseplate are collectively referred to as &lt;/span&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;insulation materials&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt;.&lt;/span&gt;&lt;/p&gt;&lt;p class=" s-blog-post-section-text-36mhd s-component-content s-blog-section-inner s-component s-text s-font-body sixteen columns container s-block-item s-repeatable-item s-block-sortable-item s-blog-post-section blog-section s-narrow-margin s-blog-post-section-36mhd s-blog-post-section-2" style="text-align: left; font-size: 18px;"&gt;&lt;span style="color: #444444;"&gt;Insulation performance directly determines the module’s &lt;/span&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;voltage withstand capability, operational stability, and service life&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt;, making it a critical parameter that cannot be overlooked in power semiconductor design.&lt;/span&gt;&lt;/p&gt;&lt;p class=" s-blog-post-section-text-c8fi8 s-component-content...&lt;a href=http://en.hxipmsemi.com/blog/insulation-characteristics-and-differences-of-igbt-chip-substrates2&gt;Read More&lt;/a&gt;</description>
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      <title>AI Technology in Semiconductor Power Cycling Testers: Intelligent Defect Detection and Optimization Practices</title>
      <pubDate>Tue, 31 Mar 2026 02:02:08 -0700</pubDate>
      <link>http://en.hxipmsemi.com/blog/ai-technology-in-semiconductor-power-cycling-testers</link>
      <guid>http://en.hxipmsemi.com/blog/ai-technology-in-semiconductor-power-cycling-testers</guid>
      <description>&lt;p&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Catalogue&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;ol&gt;&lt;li class=" s-blog-post-section-text-52s3m s-component-content s-font-body s-blog-section-inner s-component s-text sixteen columns container s-block-item s-repeatable-item s-block-sortable-item s-blog-post-section blog-section s-narrow-margin s-blog-post-section-52s3m s-blog-post-section-5buub s-blog-post-section-8p41v s-blog-post-section-94q0o s-blog-post-section-1" style="text-align: left; font-size: 18px;"&gt;&lt;span style="color: #444444;"&gt;Key Applications of AI in Power Cycling Test Systems&lt;/span&gt;&lt;/li&gt;&lt;li class=" s-blog-post-section-text-5buub" style="font-size: 18px;"&gt;&lt;span style="color: #444444;"&gt;Practical Case: AI-Based Defect Detection Using C#&lt;/span&gt;&lt;/li&gt;&lt;li class=" s-blog-post-section-text-8p41v" style="font-size: 18px;"&gt;&lt;span style="color: #444444;"&gt;Challenges and Future Outlook&lt;/span&gt;&lt;/li&gt;&lt;li class=" s-blog-post-section-text-94q0o" style="font-size: 18px;"&gt;&lt;span style="color: #444444;"&gt;Conclusion&lt;/span&gt;&lt;/li&gt;&lt;/ol&gt;&lt;p class=" s-blog-post-section-text-eov05 s-component-content s-blog-section-inner s-component s-text s-font-body sixteen columns container s-block-item s-repeatable-item s-block-sortable-item s-blog-post-section blog-section s-narrow-margin s-blog-post-section-eov05 s-blog-post-section-2" style="text-align: left; font-size: 18px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Keyword&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;p class=" s-text-color-default s-blog-post-section-text-7a0sl"&gt;&lt;span class="s-text-color-default s-blog-post-section-text-7a0sl"&gt;PCT, Semiconductor Power Cycling Testing, IEEE reports, Artificial Intelligence, AI, Intelligent Defect Detection, Dynamic Test Optimization, SHYSEMI&lt;/span&gt;&lt;/p&gt;&lt;p&gt;&lt;span style="color: #444444;"&gt;With the rapid advancement of artificial intelligence, &lt;/span&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;semiconductor power cycling testing (PCT)&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #444444;"&gt;—a critical method for evaluating the reliability and lifetime of power devices...&lt;a href=http://en.hxipmsemi.com/blog/ai-technology-in-semiconductor-power-cycling-testers&gt;Read More&lt;/a&gt;</description>
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      <title>The IGBT driver circuit composed of discrete components</title>
      <pubDate>Wed, 07 Jan 2026 00:00:51 -0800</pubDate>
      <link>http://en.hxipmsemi.com/blog/the-igbt-driver-circuit-composed-of-discrete-components</link>
      <guid>http://en.hxipmsemi.com/blog/the-igbt-driver-circuit-composed-of-discrete-components</guid>
      <description>&lt;p&gt;&lt;span style="color: #000000;"&gt;A typical discrete driver circuit's core task is: to receive weak signals from the control chip (such as MCU, PWM chip), and amplify them into a current source and current sink that can quickly and powerfully drive the gate of the &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://www.hxipmsemi.com/igbt-chips" data-type="" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;IGBT&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;. The main design considerations are similar to those of integrated circuit drivers, but all functions need to be implemented using discrete components:&lt;/span&gt;&lt;/p&gt;&lt;ul&gt;&lt;li style="font-size: 18px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Providing sufficient driving current:&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;&lt;strong&gt; &lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;to achieve rapid charging and discharging of the IGBT gate capacitance (Cge, Cgc), shortening the switching time and reducing switching losses.&lt;/span&gt;&lt;/li&gt;&lt;li style="font-size: 18px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Providing appropriate driving voltage:&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt; typically +15V ±10% for turn-on and -5V to -15V for turn-off. Negative voltage turn-off can enhance anti-interference ability and prevent Miller capacitance effect-induced misconduction.&lt;/span&gt;&lt;/li&gt;&lt;li style="font-size: 18px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Achieving fast switching speed:&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;&lt;strong&gt; &lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;requiring the push-pull output stage to have very low output impedance.&lt;/span&gt;&lt;/li&gt;&lt;li style="font-size: 18px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Necessary protection functions:&lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;&lt;strong&gt; &lt;/strong&gt;&lt;/span&gt;&lt;span style="color: #000000;"&gt;such as gate resistor selection, gate clamping, active Miller clamping, etc. (more complex protections such as saturation detection are very difficult to...&lt;a href=http://en.hxipmsemi.com/blog/the-igbt-driver-circuit-composed-of-discrete-components&gt;Read More&lt;/a&gt;</description>
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      <title>Pure Moments of Joy: The Meaning Behind HXSEMI's Birthday Celebrations</title>
      <pubDate>Mon, 05 Jan 2026 22:57:11 -0800</pubDate>
      <link>http://en.hxipmsemi.com/blog/hxsemi-is-throwing-a-party-for-her-birthday-partner-in-january</link>
      <guid>http://en.hxipmsemi.com/blog/hxsemi-is-throwing-a-party-for-her-birthday-partner-in-january</guid>
      <description>&lt;p&gt;&lt;span style="color: #0f1115;"&gt;At HXSEMI, there’s one afternoon each month when our meeting rooms transform completely—no project timelines, no technical debates, no open issue lists. Just the sweet aroma of cake, the sound of shared laughter, and colleagues who, for a little while, set aside their titles as “chip engineers” or “process specialists” to simply enjoy being together.&lt;/span&gt;&lt;/p&gt;&lt;p style="font-size: 28px;"&gt;&lt;span style="color: #1966e1;"&gt;&lt;strong&gt;Why We Need Gatherings That Aren’t About Work&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;&lt;p class=" p" style="font-size: inherit;"&gt;T&lt;span style="color: #0f1115;"&gt;he semiconductor industry is demanding. From wafer inspection to chip packaging, circuit design to yield optimization, our days are filled with precision and technical challenges. That’s exactly why we need a dedicated space for genuine downtime—a moment truly about life, about each other, and about pure, lighthearted joy.&lt;/span&gt;&lt;/p&gt;&lt;p class=" p" style="font-size: inherit;"&gt;&lt;span style="color: #0f1115;"&gt;O&lt;/span&gt;u&lt;span style="color: #0f1115;"&gt;r birthday celebrations give that space tangible form. Here:&lt;/span&gt;&lt;/p&gt;&lt;ul&gt;&lt;li class=" p" style="font-size: inherit;"&gt;&lt;span style="color: #0f1115;"&gt;We&lt;/span&gt; &lt;span style="color: #0f1115;"&gt;don’t &lt;/span&gt;&lt;span style="color: #051329;"&gt;discuss the product application plans&lt;/span&gt;&lt;span style="color: #0f1115;"&gt;—we compete to see who can blow out candles the fastest.&lt;/span&gt;&lt;/li&gt;&lt;li class=" p" style="font-size: inherit;"&gt;&lt;span style="color: #0f1115;"&gt;We &lt;/span&gt;d&lt;span style="color: #0f1115;"&gt;on’t analyze &lt;/span&gt;&lt;span style="color: #ffa64d;"&gt;&lt;a style="color: #ffa64d;" href="https://en.hxipmsemi.com/technology" data-type="undefined" target="_blank"&gt;&lt;u&gt;&lt;strong&gt;chip fabrication processes&lt;/strong&gt;&lt;/u&gt;&lt;/a&gt;&lt;/span&gt;&lt;span style="color: #0f1115;"&gt;—we share recommendations for great movies we’ve seen recently.&lt;/span&gt;&lt;/li&gt;&lt;li class=" p" style="font-size: inherit;"&gt;&lt;span style="color: #0f1115;"&gt;We d&lt;/span&gt;o&lt;span style="color: #0f1115;"&gt;n’t &lt;/span&gt;&lt;span...&lt;a href=http://en.hxipmsemi.com/blog/hxsemi-is-throwing-a-party-for-her-birthday-partner-in-january&gt;Read More&lt;/a&gt;</description>
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